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insulated gate bipolar transistor with ultrafast soft recovery diode features 8/18/04 ? low vce (on) non punch through igbt technology. low diode vf. 10s short circuit capability. square rbsoa. ultrasoft diode reverse recovery characteristics. positive vce (on) temperature coefficient. benefits www.irf.com 1 benchmark efficiency for motor control. rugged transient performance. low emi. excellent current sharing in parallel operation. absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 22 i c @ t c = 100c continuous collector current 12 i cm pulsed collector current 44 i lm clamped inductive load current 44 a i f @ t c = 25c diode continuous forward current 22 i f @ t c = 100c diode continuous forward current 10 i fm diode maximum forward current 44 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 156 p d @ t c = 100c maximum power dissipation 62 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 0.8 r jc junction-to-case - diode ??? ??? 3.4 r cs case-to-sink, flat, greased surface ??? 0.50 ??? c/w r ja junction-to-ambient, typical socket mount ??? ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 1.44 ??? g IRGB10B60KD irgs10b60kd irgsl10b60kd e g n-channel c v ces = 600v i c = 12a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 1.8v d 2 pak irgs10b60kd to-220ab IRGB10B60KD to-262 irgsl10b60kd
irg/b/s/sl10b60kd 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.3 ??? v/c v ge = 0v, i c = 1.0ma, (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.5 1.80 2.20 i c = 10a, v ge = 15v ??? 2.20 2.50 v i c = 10a, v ge = 15v t j = 150c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -10 ??? mv/c v ce = v ge , i c = 1.0ma, (25c-150c) g fe forward transconductance ??? 7.0 ??? s v ce = 50v, i c = 10a, pw=80s i ces zero gate voltage collector current ??? 3.0 150 a v ge = 0v, v ce = 600v ??? 300 700 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.30 1.45 i c = 10a ??? 1.30 1.45 v i c = 10a t j = 150c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) ref.fig. 5, 6,7 9,10,11 9,10,11 12 8 parameter min. typ. max. units conditions qg total gate charge (turn-on) ??? 38 ??? i c = 10a qge gate - emitter charge (turn-on) ??? 4.3 ??? nc v cc = 400v qgc gate - collector charge (turn-on) ??? 16.3 ??? v ge = 15v e on turn-on switching loss ??? 140 247 j i c = 10a, v cc = 400v e off turn-off switching loss ??? 250 360 v ge = 15v,r g = 47 ?, l = 200h e tot total switching loss ??? 390 607 ls = 150nh t j = 25c t d(on) turn-on delay time ??? 30 39 i c = 10a, v cc = 400v t r rise time ??? 20 29 v ge = 15v, r g = 47 ?, l = 200h t d(off) turn-off delay time ??? 230 262 ns ls = 150nh, t j = 25c t f fall time ??? 23 32 e on turn-on switching loss ??? 230 340 i c = 10a, v cc = 400v e off turn-off switching loss ??? 350 464 j v ge = 15v,r g = 47 ?, l = 200h e tot total switching loss ??? 580 804 ls = 150nh t j = 150c t d(on) turn-on delay time ??? 30 39 i c = 10a, v cc = 400v t r rise time ??? 20 28 v ge = 15v, r g = 47 ?, l = 200h t d(off) turn-off delay time ??? 250 274 ns ls = 150nh, t j = 150c t f fall time ??? 26 34 c ies input capacitance ??? 620 ??? v ge = 0v c oes output capacitance ??? 62 ??? pf v cc = 30v c res reverse transfer capacitance ??? 22 ??? f = 1.0mhz t j = 150c, i c = 44a, vp =600v v cc = 500v, v ge = +15v to 0v, s t j = 150c, vp =600v,r g = 47 ? v cc = 360v, v ge = +15v to 0v erec reverse recovery energy of the diode ??? 245 330 j t j = 150c t rr diode reverse recovery time ??? 90 105 ns v cc = 400v, i f = 10a, l = 200h i rr diode peak reverse recovery current ??? 19 22 a v ge = 15v,r g = 47 ?, ls = 150nh switching characteristics @ t j = 25c (unless otherwise specified) rbsoa reverse bias safe operting area full square scsoa short circuit safe operting area 10 ??? ??? ref.fig. ct1 ct4 ct4 13,15 wf1wf2 4 ct2 ct3 wf4 17,18,19 20, 21 ct4,wf3 ct4 r g = 47 ? 14, 16 ct4 wf1 wf2 note to are on page 15
irg/b/s/sl10b60kd www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 t c (c) 0 20 40 60 80 100 120 140 160 180 p t o t ( w ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 20 s 0 20 40 60 80 100 120 140 160 t c (c) 0 5 10 15 20 25 i c ( a )
irg/b/s/sl10b60kd 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s 0123456 v ce (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f (v) 0 5 10 15 20 25 30 35 40 i f ( a ) -40c 25c 150c 0123456 v ce (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
irg/b/s/sl10b60kd www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s 5 101520 v ge (v ) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 15a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 15a 0 5 10 15 20 v ge (v ) 0 10 20 30 40 50 60 70 80 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 15a
irg/b/s/sl10b60kd 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 150c; l=200h; v ce = 400v r g = 47 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l=200h; v ce = 400v r g = 47 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l=200h; v ce = 400v i ce = 10a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l=200h; v ce = 400v i ce = 10a; v ge = 15v 0 50 100 150 r g ( ? ) 0 50 100 150 200 250 300 350 400 450 500 e n e r g y ( j ) e on e off 0 5 10 15 20 25 i c (a) 0 100 200 300 400 500 600 700 800 e n e r g y ( j ) e off e on 0 5 10 15 20 25 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on
irg/b/s/sl10b60kd www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 10a fig. 20 - typical diode q rr v cc = 400v; v ge = 15v;t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 10a; t j = 150c 0 50 100 150 r g ( ?) 0 5 10 15 20 25 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 0 5 10 15 20 25 i r r ( a ) 0 500 1000 1500 di f /dt (a/s) 400 500 600 700 800 900 1000 1100 1200 q r r ( c ) 22 ? 47 ? 100 ? 10 ? 20a 10a 5.0a 0 5 10 15 20 25 i f (a) 0 5 10 15 20 25 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ?
irg/b/s/sl10b60kd 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 150c fig. 23 - typical gate charge vs. v ge i ce = 10a; l = 600h fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 5 10 15 20 25 i f (a ) 0 50 100 150 200 250 300 350 400 450 e n e r g y ( j ) 22 ? 10 ? 47 ? 100 ? 0 10203040 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 1 10 100 v ce (v) 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres
irg/b/s/sl10b60kd www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.285 0.000134 0.241 0.000565 0.288 0.0083 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri ri (c/w) i (sec) 0.846 0.000149 1.830 0.001575 1.143 0.027005 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri
irg/b/s/sl10b60kd 10 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v
irg/b/s/sl10b60kd www.irf.com 11 -100 0 100 200 300 400 500 600 -0.20 0.00 0.20 0.40 0.60 0.80 time(s) v ce (v) -2 0 2 4 6 8 10 12 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 15.90 16.00 16.10 16.20 time (s) v ce (v) -5 0 5 10 15 20 25 30 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -600 -500 -400 -300 -200 -100 0 100 -0.15 -0.05 0.05 0.15 0.25 time (s) v f (v) -20 -15 -10 -5 0 5 10 15 i f (a) pe ak i rr t rr q rr 10% peak irr 0 50 100 150 200 250 300 350 400 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v) 0 50 100 i ce (a) v ce i ce fig. wf3- typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4- typ. s.c waveform @ t j = 150c using fig. ct.3 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4
irg/b/s/sl10b60kd 12 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector

dimensions are shown in millimeters (inches)

example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s emb le d on ww 19, 1997 part numbe r as s e mb l y lot code dat e code year 7 = 1997 line c we e k 19 logo rect ifier int e rnat ional note: "p" in assembly line position indicates "lead-free"
irg/b/s/sl10b60kd www.irf.com 13

dimensions are shown in millimeters (inches) note: "p" in as s embly line pos ition indicates "l ead-f ree" f530s t his is an irf 530s with lot code 8024 as s e mble d on ww 02, 2000 in the as s e mb ly line "l" assembly lot code inte rnat ional re ct ifie r logo part numbe r dat e code ye ar 0 = 2000 we e k 02 line l f530s a = assembly site code week 02 p = de s i gnat e s l e ad- f r e e product (optional) rectifier international logo lot code assembly ye ar 0 = 2000 dat e code part number
irg/b/s/sl10b60kd 14 www.irf.com to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) as s e mb l y lot code rect ifier int e rnat ional as s e mb le d on ww 19, 1997 note: "p" in as sembly line pos ition indicates "l ead-f ree" in t he as s e mb ly l ine "c" logo t his is an irl3103l lot code 1789 example: line c dat e code we e k 19 ye ar 7 = 1997 part number part number logo lot code as s e mb l y int e rnat ional rect ifier product (optional) p = de s i gnat e s l e ad- f r e e a = as s e mb l y s it e code we e k 19 ye ar 7 = 1997 dat e code or
irg/b/s/sl10b60kd www.irf.com 15 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. notes: this is only applied to to-220ab package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery. v cc = 80% (v ces ), v ge = 20v, l = 100h, r g = 47 ?. to-220 package is not recommended for surface mount application

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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